Technological status of Cu(In,Ga)(Se,S)2-based photovoltaics
Identifieur interne : 000384 ( Main/Repository ); précédent : 000383; suivant : 000385Technological status of Cu(In,Ga)(Se,S)2-based photovoltaics
Auteurs : RBID : Pascal:13-0351884Descripteurs français
- Pascal (Inist)
- Article synthèse, Matériau absorbant, Etat actuel, Diminution coût, Panneau solaire, Cellule solaire, Procédé dépôt, Procédé fabrication, Taux conversion, Dérivateur, Evaluation performance, Sulfure de gallium, Sulfure d'indium, Sulfure de cuivre, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Couche mince, Chalcopyrite, Soufre, Cu(In,Ga)(S,Se)2, Cu(In,Ga)Se2.
- Wicri :
- concept : Soufre.
English descriptors
- KwdEn :
- Absorbent material, Chalcopyrite, Conversion rate, Copper selenides, Copper sulfide, Cost lowering, Deposition process, Differentiator, Gallium selenides, Gallium sulfide, Indium selenides, Indium sulfide, Manufacturing process, Performance evaluation, Photovoltaic array, Review, Solar cell, State of the art, Sulfur, Thin film.
Abstract
This report presents a selective overview of the technological status of thin film photovoltaics based on chalcopyrite compound Cu(In,Ga)(Se,S)2 (CIGSSe, or CIGSe if the material does not contain any sulphur) absorber layers. It is not intended to provide a complete list of all active research laboratories or companies in the field, but rather to show the exemplary state of the art of different approaches that are currently pursued to produce low-cost, highly efficient CIGSe or CIGSSe solar cells and modules. For an academic perspective and to assess the potentials, we concentrated on deposition processes leading to highest conversion efficiencies or of special technical interest. On the industrial side, the absorber deposition method was chosen as main differentiator. Highest efficiency values are given to the best of our knowledge and no claim is made for the completeness of the review of all important activities in the field.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Technological status of Cu(In,Ga)(Se,S)<sub>2</sub>-based photovoltaics</title><author><name sortKey="Reinhard, P" uniqKey="Reinhard P">P. Reinhard</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Buecheler, S" uniqKey="Buecheler S">S. Buecheler</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Tiwari, A N" uniqKey="Tiwari A">A. N. Tiwari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0351884</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0351884 INIST</idno><idno type="RBID">Pascal:13-0351884</idno><idno type="wicri:Area/Main/Corpus">000503</idno><idno type="wicri:Area/Main/Repository">000384</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbent material</term><term>Chalcopyrite</term><term>Conversion rate</term><term>Copper selenides</term><term>Copper sulfide</term><term>Cost lowering</term><term>Deposition process</term><term>Differentiator</term><term>Gallium selenides</term><term>Gallium sulfide</term><term>Indium selenides</term><term>Indium sulfide</term><term>Manufacturing process</term><term>Performance evaluation</term><term>Photovoltaic array</term><term>Review</term><term>Solar cell</term><term>State of the art</term><term>Sulfur</term><term>Thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Article synthèse</term><term>Matériau absorbant</term><term>Etat actuel</term><term>Diminution coût</term><term>Panneau solaire</term><term>Cellule solaire</term><term>Procédé dépôt</term><term>Procédé fabrication</term><term>Taux conversion</term><term>Dérivateur</term><term>Evaluation performance</term><term>Sulfure de gallium</term><term>Sulfure d'indium</term><term>Sulfure de cuivre</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Couche mince</term><term>Chalcopyrite</term><term>Soufre</term><term>Cu(In,Ga)(S,Se)2</term><term>Cu(In,Ga)Se2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Soufre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This report presents a selective overview of the technological status of thin film photovoltaics based on chalcopyrite compound Cu(In,Ga)(Se,S)<sub>2</sub> (CIGSSe, or CIGSe if the material does not contain any sulphur) absorber layers. It is not intended to provide a complete list of all active research laboratories or companies in the field, but rather to show the exemplary state of the art of different approaches that are currently pursued to produce low-cost, highly efficient CIGSe or CIGSSe solar cells and modules. For an academic perspective and to assess the potentials, we concentrated on deposition processes leading to highest conversion efficiencies or of special technical interest. On the industrial side, the absorber deposition method was chosen as main differentiator. Highest efficiency values are given to the best of our knowledge and no claim is made for the completeness of the review of all important activities in the field.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>119</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Technological status of Cu(In,Ga)(Se,S)<sub>2</sub>-based photovoltaics</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Thin-film Photovoltaic Solar Cells</s1></fA09><fA11 i1="01" i2="1"><s1>REINHARD (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>BUECHELER (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>TIWARI (A. N.)</s1></fA11><fA12 i1="01" i2="1"><s1>SHAH (Arvind Victor)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KREBS (Frederik Christian)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>TIWARI (Ayodhya N.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>POORTMANS (Jef)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>MCEVOY (Augustin)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Department of Energy Conversion and Storage, Technical University of Denmark, Frederiksborgvej 399</s1><s2>4000 Roskilde</s2><s3>DNK</s3><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>Imec</s1><s2>Kapeldreef 75</s2><s3>BEL</s3><sZ>4 aut.</sZ></fA15><fA15 i1="03"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>3 aut.</sZ></fA15><fA20><s1>287-290</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000501000160390</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>42 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0351884</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This report presents a selective overview of the technological status of thin film photovoltaics based on chalcopyrite compound Cu(In,Ga)(Se,S)<sub>2</sub> (CIGSSe, or CIGSe if the material does not contain any sulphur) absorber layers. It is not intended to provide a complete list of all active research laboratories or companies in the field, but rather to show the exemplary state of the art of different approaches that are currently pursued to produce low-cost, highly efficient CIGSe or CIGSSe solar cells and modules. For an academic perspective and to assess the potentials, we concentrated on deposition processes leading to highest conversion efficiencies or of special technical interest. On the industrial side, the absorber deposition method was chosen as main differentiator. 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